XEIA3 model 2016

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XEIA3 model 2016 stands out as the ideal turnkey FIB-SEM system that offers all these capabilities in one single and unique instrument with outstanding performance. With the new XEIA3 model 2016, TESCAN not only delivers an instrument top of its class but also fulfils its commitment to continue helping researchers push science and development forward. This is also reflected in the careful customisation of every system in order to meet the specific needs of every customer. From materials to life sciences or from engineering to the semiconductor industry, TESCAN guarantees high-per-formance systems without any compromises.

Features

Triglav™ – newly designed UHR electron column

TriLens™ objective system: unique combination of three-lens objective and crossover-free beam path
Advanced detection system with multiple SE and BSE detectors
TriSE™ and TriBE™
Triglav™ – Ultimate ultra-high resolution at low beam energy: 1 nm at 1 keV and 0.7 nm at 15 keV
EquiPower™ thermal power dissipation system for excellent electron column stability
Electron beam currents up to 400 nA and rapid beam energy changes
Optimised column geometry for accommodating large wafers up to 8”

Extremely powerful Xe plasma FIB column

ECR-generated Xe plasma ion source FIB columnfor achieving the most challenging large-scale milling tasks in unbeatable short times frames

50x faster than Ga LMIS FIBs.
Ion beam range current of 1 pA to 2 µA and resolution of < 25 nm
Newly developed high resolution Xe plasma FIB column (Optional) achieving resolution of < 15 nm for extended patterning capabilities
Large-mass xenon ions with larger FIB current range for ultra-fast sputtering even without gas-assisted enhancement
Significant reduction in ion implantation compared to Ga LMIS FIBs
Xe noble gas atoms do not alter electrical properties in the vicinity of the patterned area
No intermetallic compounds formed during FIB milling