XEIA3 model 2016 stands out as the ideal turnkey FIB-SEM system that offers all these capabilities in one single and unique instrument with outstanding performance. With the new XEIA3 model 2016, TESCAN not only delivers an instrument top of its class but also fulfils its commitment to continue helping researchers push science and development forward. This is also reflected in the careful customisation of every system in order to meet the specific needs of every customer. From materials to life sciences or from engineering to the semiconductor industry, TESCAN guarantees high-per-formance systems without any compromises.

XEIA

Silicon substrate with nanocrystalline diamonds with Si vacancies imaged at 2 Lift-out of a steel sample block prepared for the purposes of FIB-SEM tomography A large area cross-section in a TFT display panel. A depth of Perpendicular gas-assisted delayering in Organization of dental tissue studied with a plasma FIB-SEM
Features

Triglav™ – newly designed UHR electron column

  • TriLens™ objective system: unique combination of three-lens objective and crossover-free beam path
  • Advanced detection system with multiple SE and BSE detectors
  • Triglav™ – Ultimate ultra-high resolution at low beam energy: 1 nm at 1 keV and 0.7 nm at 15 keV
  • EquiPower™ thermal power dissipation system for excellent electron column stability
  • Electron beam currents up to 400 nA and rapid beam energy changes
  • Optimised column geometry for accommodating large wafers up to 8”

Extremely powerful Xe plasma FIB column

ECR-generated Xe plasma ion source FIB columnfor achieving the most challenging large-scale milling tasks in unbeatable short times frames

  • 50x faster than Ga LMIS FIBs.
  • Ion beam range current of 1 pA to 2 µA and resolution of < 25 nm
  • Newly developed high resolution Xe plasma FIB column (Optional) achieving resolution of < 15 nm for extended patterning capabilities
  • Large-mass xenon ions with larger FIB current range for ultra-fast sputtering even with­out gas-assisted enhancement
  • Significant reduction in ion implantation compared to Ga LMIS FIBs
  • Xe noble gas atoms do not alter electrical properties in the vicinity of the patterned area
  • No intermetallic compounds formed during FIB milling
Applications

For information on semiconductors & microelectronics click here

For information on material science click here

For information on life sciences click here

Services

For Support Services 

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